A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques

We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously match multiple stacked transistors subject to loadline constraints is demonstrated using two prototype networks. A 90-nm silicon-germanium powe...

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Bibliographic Details
Published inIEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (Online) pp. 53 - 56
Main Authors O'Malley, Everett, Buckwalter, James F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 16.10.2022
Subjects
D-band
Density measurement
embedding network
Heterojunction bipolar transistors
Integrated circuits
mm-wave
power added efficiency
power amplifier
Power amplifiers
power density
Power system measurements
Prototypes
Silicon
transistor stacking
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ISSN2831-4999
DOI10.1109/BCICTS53451.2022.10051692

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Summary:We present a design technique for high-power density with stacked devices in power amplifiers at 140-GHz. A theory of embedding networks that simultaneously match multiple stacked transistors subject to loadline constraints is demonstrated using two prototype networks. A 90-nm silicon-germanium power amplifier is presented at D-band (140 GHz) using a single stage PA and a two-stage, power-combined PA. The PAs demonstrate peak power-added efficiency (PAE) of 10.8% and a power density of 990mW/mm 2 . To our knowledge, this is the highest D-band power density for a silicon process.
ISSN:2831-4999
DOI:10.1109/BCICTS53451.2022.10051692