Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential wel...

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Published inAdvanced materials (Weinheim) Vol. 28; no. 33; pp. 7101 - 7105
Main Authors Kern, Johannes, Niehues, Iris, Tonndorf, Philipp, Schmidt, Robert, Wigger, Daniel, Schneider, Robert, Stiehm, Torsten, Michaelis de Vasconcellos, Steffen, Reiter, Doris E., Kuhn, Tilmann, Bratschitsch, Rudolf
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 01.09.2016
Subjects
atomically thin semiconductors
nanogaps
single-photon emitters
strain engineering
super-localization microscopy
super-localization microscopy
strain engineering
nanogaps
atomically thin semiconductors
single-photon emitters
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ISSN0935-9648
1521-4095
1521-4095
DOI10.1002/adma.201600560

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Summary:Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single‐photon emitters are localized there with a precision better than 140 nm.
Bibliography:ArticleID:ADMA201600560
Deutsche Forschungsgemeinschaft - No. SPP 1391
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ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201600560