UV/EB Cure Mechanism for Porous PECVD/SOD Low-k SiCOH Materials

The mechanism of UV and EB cure processes for porous low-k SiCOH materials was investigated by using experimental results obtained using PECVD and SOD films as well as simulated results. Both UV and EB cures induced dielectric constant change and Young's modulus improvement because Si-OH elimin...

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Bibliographic Details
Published inProceedings of the IEEE International Interconnect Technology Conference pp. 66 - 68
Main Authors Nakao, S.-I., Ushio, J., Ohno, T., Hamada, T., Kamigaki, Y., Kato, M., Yoneda, K., Kondo, S., Kobayashi, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Chemical analysis
Curing
Dielectric constant
Dielectric materials
Lead compounds
Materials science and technology
Moisture
Optical films
Paramagnetic resonance
Semiconductor materials
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ISBN1424401046
9781424401048
ISSN2380-632X
DOI10.1109/IITC.2006.1648648

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Summary:The mechanism of UV and EB cure processes for porous low-k SiCOH materials was investigated by using experimental results obtained using PECVD and SOD films as well as simulated results. Both UV and EB cures induced dielectric constant change and Young's modulus improvement because Si-OH elimination (moisture removal) and cross-link formation occurred during film shrinkage. Excess UV curing, however, caused defects in the porous SiCOH film, as indicated by ESR analysis. The mechanism discussed in this work is applicable to most UV/EB cure systems and PECVD/SOD SiCOH materials for 45-nm-node Cu interconnects
ISBN:1424401046
9781424401048
ISSN:2380-632X
DOI:10.1109/IITC.2006.1648648