Cu Alloy Metallization for Self-Forming Barrier Process

A novel Cu-Mn alloy has been developed to self-form a diffusion barrier layer at metal/dielectric interface without depositing a conventional metal barrier layer. The integration results are reviewed first to show its excellent reliability and electrical characteristics. Selection criteria of the al...

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Bibliographic Details
Published inProceedings of the IEEE International Interconnect Technology Conference pp. 161 - 163
Main Authors Koike, J., Haneda, M., Iijima, J., Wada, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Alloying
Amorphous materials
Atherosclerosis
Chemical elements
Conductivity
Copper alloys
Dielectrics
Electrons
Materials science and technology
Metallization
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ISBN1424401046
9781424401048
ISSN2380-632X
DOI10.1109/IITC.2006.1648676

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Summary:A novel Cu-Mn alloy has been developed to self-form a diffusion barrier layer at metal/dielectric interface without depositing a conventional metal barrier layer. The integration results are reviewed first to show its excellent reliability and electrical characteristics. Selection criteria of the alloying element are delineated. The reason why Mn is better than other elements is explained in terms of thermodynamic activity. The impacts of the self-forming barrier process on the BEOL process are discussed
ISBN:1424401046
9781424401048
ISSN:2380-632X
DOI:10.1109/IITC.2006.1648676