Effect of nano-SiO2 on flow-ability, setting time and strength properties of controlled low-strength materials using native silt soil

Controlled low-strength material (CLSM) is widely applied in many backfill engineering applications because of its excellent workability and sustainability. However, for CLSM using native soil as fine aggregate and industrial by-products as a binder, the flow-ability and self-leveling performance wi...

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Published inJournal of physics. Conference series Vol. 2775; no. 1; pp. 012004 - 12009
Main Authors Qiu, Haomiao, Jiang, Senhua, Shou, Lei
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.06.2024
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ISSN1742-6588
1742-6596
DOI10.1088/1742-6596/2775/1/012004

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Summary:Controlled low-strength material (CLSM) is widely applied in many backfill engineering applications because of its excellent workability and sustainability. However, for CLSM using native soil as fine aggregate and industrial by-products as a binder, the flow-ability and self-leveling performance will deteriorate, and the setting time will be slower, which is unsuitable for construction applications. The addition of additives is regarded as an effective technique for improving the performance of CLSM. Although the effects of nano-SiO2 on the performance of concrete have been the subject of many studies, little research has been done on its effects on CLSM. The present work investigated the effects of adding nano-SiO2 as an additive. The flow-ability, hydraulic penetrometer, and unconfined compressive strength (UCS) tests are performed with the increasing nano-SiO2 content. Lastly, the mercury intrusion porosimetry (MIP) test is carried out to identify the effects of nano-SiO2 on the morphology of pores. For controlled low-strength materials using native silt soil, significant improvements in setting time and strength are observed with the increase of nano-SiO2. A decrease in the average pore diameter and an increase in the percentage of pore diameter below 20 nm are also observed in the specimen with nano-SiO2.
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2775/1/012004