Simple Radiated Noise Estimation Based on Datasets of SiC and Si IPMs for Inverter Use

For the sake of rapid prototyping and product development, it is desirable to comprehend radiated noise characteristics of SiC and Si devices at the earliest steps of designing new inverter systems because end products are subject to electromagnetic noise regulations. However, there is no internatio...

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Bibliographic Details
Published inConference proceedings - IEEE Applied Power Electronics Conference and Exposition pp. 64 - 68
Main Authors Tadakuma, Toshiya, Rogers, Michael, Joko, Motonobu
Format Conference Proceeding
LanguageEnglish
Published IEEE 19.03.2023
Subjects
Diode
Electromagnetic interference
EMC
Estimation
IGBT
Inverters
IPMs
MOSFET
Multichip modules
Power device
Radiated noise
Rapid prototyping
SiC
Silicon
Silicon carbide
Online AccessGet full text
ISSN2470-6647
DOI10.1109/APEC43580.2023.10131141

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Summary:For the sake of rapid prototyping and product development, it is desirable to comprehend radiated noise characteristics of SiC and Si devices at the earliest steps of designing new inverter systems because end products are subject to electromagnetic noise regulations. However, there is no international standard for evaluating radiated noise directly, not only for single chips, but also 6in1 Intelligent Power Modules (IPMs). This paper introduces a method to estimate radiated noise current dependency based on the radiated noise datasets of SiC and Si IPMs obtained by applying an extended double pulse test. The estimation method is then compared to the results of an actual operating inverter for validation.
ISSN:2470-6647
DOI:10.1109/APEC43580.2023.10131141