Study of TSV filling performance with wide-range pattern densities by using a novel plating chamber with surface paddle agitation

TSV (through silicon via) metallization is one key process in 3DIC integration. Due to high aspect ratio and filling volume, TSV copper plating is the most time-consuming module in the whole process flow. To increase the throughput of electroplating, tool configurations and plating chemistry should...

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Published in2013 International Symposium on VLSI Technology, Systems and Application pp. 1 - 2
Main Authors Shang-Chun Chen, Yiu-Hsiang Chang, Yu-Chen Hsin, Chien-Chou Chen, Jui-Chin Chen, Po-chih Chang, Pei-Jer Tzeng, Sue-Chen Liao, Shin-Chiang Chen, Chung-Chih Wang, Tzu-Chien Hsu, Yu-Ming Lin, Erh-Hao Chen, Cha-Hsin Lin, Tzu-Kun Ku
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2013
Subjects
Chemicals
Copper
Filling
Metallization
Surface treatment
Through-silicon vias
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ISBN1467330817
9781467330817
DOI10.1109/VLSI-TSA.2013.6545618

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Summary:TSV (through silicon via) metallization is one key process in 3DIC integration. Due to high aspect ratio and filling volume, TSV copper plating is the most time-consuming module in the whole process flow. To increase the throughput of electroplating, tool configurations and plating chemistry should be optimized. In this work, an electroplating chamber with a novel paddle design is used in this experiment to study the effects of paddle agitation on plating performance. The influence of this paddle design on different TSV pattern density and geometric scheme are also investigated.
ISBN:1467330817
9781467330817
DOI:10.1109/VLSI-TSA.2013.6545618