Manufacturable Low Keff (Keff<2.5) Cu Interconnects by Selective / Low Damage Air Gap Formation

A new technology for manufacturing low Keff (<2.5) Cu interconnects with air gaps has been first proposed and demonstrated. Key points in this technology are suppression of damage to lines during air gap formation and exclusion of air gaps by a carefully designed manner. Using this technology, Ke...

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Bibliographic Details
Published inProceedings of the IEEE International Interconnect Technology Conference pp. 15 - 18
Main Authors Harada, T., Takahashi, M., Murakami, K., Korogi, H., Sasaki, T., Hattori, T., Ogawa, S., Ueda, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Air gaps
Degradation
Dielectrics
Integrated circuit interconnections
Manufacturing
Resists
Silicon compounds
Space technology
Ultra large scale integration
Wet etching
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ISBN1424401046
9781424401048
ISSN2380-632X
DOI10.1109/IITC.2006.1648633

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Summary:A new technology for manufacturing low Keff (<2.5) Cu interconnects with air gaps has been first proposed and demonstrated. Key points in this technology are suppression of damage to lines during air gap formation and exclusion of air gaps by a carefully designed manner. Using this technology, Keff lower than 2.5 was realized without any degradation of yield, performance and reliability
ISBN:1424401046
9781424401048
ISSN:2380-632X
DOI:10.1109/IITC.2006.1648633