Monolithic SOI pixel detector for x-ray imaging applications with high dynamic range and MHz frame-rate

A monolithic pixel detector implemented in 200nm silicon-on-insulator technology for x-ray imaging applications is presented. The photons are detected in the fully-depleted, 500 εm thick, high-resistance substrate. The substrate is isolated by the buried silicon-dioxide from the electronics layer. T...

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Bibliographic Details
Published in2011 IEEE Nuclear Science Symposium Conference Record pp. 1051 - 1056
Main Authors Peric, I., Mandl, F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2011
Subjects
Current measurement
Imaging
Laser applications
Measurement by laser beam
SOI detector
Thickness measurement
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ISBN1467301183
9781467301183
ISSN1082-3654
DOI10.1109/NSSMIC.2011.6154319

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Summary:A monolithic pixel detector implemented in 200nm silicon-on-insulator technology for x-ray imaging applications is presented. The photons are detected in the fully-depleted, 500 εm thick, high-resistance substrate. The substrate is isolated by the buried silicon-dioxide from the electronics layer. The pixel electronics is able to measure and digitize photon energy or number of photons in a wide signal range. Typically, for the measurement time of 1 εs, the dynamic range is 10 4 . Thanks to the used ADC structure, the energy response is nearly linear. The detector is a simple and cheap alternative for hybrid pixel x-ray imaging detectors at synchrotron-light- and x-ray free electron laser-sources. Pixel electronics is described and experimental results presented.
ISBN:1467301183
9781467301183
ISSN:1082-3654
DOI:10.1109/NSSMIC.2011.6154319