Physical, Electrical, and Reliability Characterization of Ru for Cu Interconnects

• Published in: Proceedings of the IEEE International Interconnect Technology Conference pp. 187 - 190
• Main Authors: Yang, C.-C., Spooner, T., Ponoth, S., Chanda, K., Simon, A., Lavoie, C., Lane, M., Hu, C.-K., Liniger, E., Gignac, L., Shaw, T., Cohen, S., McFeely, F., Edelstein, D.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2006
• Subjects: Adhesives; Atherosclerosis; Chemical vapor deposition; Electric variables measurement; Electrical resistance measurement; Electromigration; Transistors; Voltage; X-ray diffraction; X-ray scattering
• ISBN: 1424401046; 9781424401048
• ISSN: 2380-632X
• DOI: 10.1109/IITC.2006.1648684

Thin film characterization, electrical performance, and preliminary reliability of physical vapor-deposited (PVD) TaN/chemical vapor-deposited (CVD) Ru bilayer were carried out to evaluate its feasibility as a liner layer for back-end of line (BEOL) Cu-low k integration. Adhesion and barrier strength were studied using 4-point bend, X-ray diffraction (XRD), and triangular voltage sweep (TVS) techniques. Electrical yields and line/via resistances were measured at both single and dual damascene levels, with PVD TaN/Ta liner layer as a baseline control. Reliability studies included electromigration (EM) and current-voltage (I-V) breakdown tests