Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance

By inserting thin WSi x layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of transistor. This insertion also could prevent the formation of Si-N dielectric laye...

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Bibliographic Details
Published in2006 IEEE International Reliability Physics Symposium Proceedings pp. 374 - 378
Main Authors Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Hong-Seon Yang, Kwangok Kim, Noh-Jung Kwak, Hyun-Chul Sohn, Jin Woong Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2006
Subjects
Chemical vapor deposition
Contact resistance
Electrodes
MOS capacitors
MOSFET circuits
Pattern analysis
Random access memory
Stress
Tin
Tungsten
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ISBN9780780394988
0780394984
ISSN1541-7026
DOI10.1109/RELPHY.2006.251247

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Summary:By inserting thin WSi x layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of transistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively
ISBN:9780780394988
0780394984
ISSN:1541-7026
DOI:10.1109/RELPHY.2006.251247