A Comparison of Silicon and Silicon Carbide MOSFET Switching Characteristics

Silicon carbide (SiC) is a wide-bandgap semiconductor material that has several promising properties for use in power electronics applications. While SiC manufacturing techniques are still being researched, several SiC devices such as SiC Schottky diodes have entered the market and are finding utili...

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Bibliographic Details
Published in2007 IEEE Region 5 Technical Conference pp. 273 - 277
Main Authors Ong, A., Carr, J., Balda, J., Mantooth, A.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.04.2007
Subjects
MOSFET circuits
Power electronics
Power semiconductor switches
Schottky diodes
Semiconductor device manufacture
Semiconductor materials
Silicon carbide
Switching converters
Testing
Voltage
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ISBN142441279X
9781424412792
DOI10.1109/TPSD.2007.4380318

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Summary:Silicon carbide (SiC) is a wide-bandgap semiconductor material that has several promising properties for use in power electronics applications. While SiC manufacturing techniques are still being researched, several SiC devices such as SiC Schottky diodes have entered the market and are finding utility in numerous applications. In this paper, a new 1200 V, 10 A SiC MOSFET will be compared to 1000 V, 10 A Si MOSFET in terms of their dc and transient characteristics and their switching performance in a step-down converter. The SiC device compares favorably to the Si device tested as well as other Si devices available on the market for a similar voltage range.
ISBN:142441279X
9781424412792
DOI:10.1109/TPSD.2007.4380318