Solar cell heterojunction a-SiC:H/c-Si structure under dark and illumination

Thin films of p-doped amorphous SiC used as an emitter layer for heterojunction solar cells have been the subject of this work. Thin amorphous SiC films were prepared by PECVD technology. Impact of dopation on the resulting properties of heterojunction was the main object of this study. The DC measu...

Full description

Saved in:
Bibliographic Details
Published in2015 16th International Scientific Conference on Electric Power Engineering (EPE) pp. 672 - 675
Main Authors Perny, Milan, Saly, Vladimir, Mikolasek, Miroslav, Vary, Michal, Huran, Jozef
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Capacitance
DC characterization
doping
equivalent circuit
Heterojunctions
Impedance
impedance spectroscopy
Lighting
optimalization technology
Photovoltaic cells
Resistance
Spectroscopy
Online AccessGet full text
DOI10.1109/EPE.2015.7161115

Cover

More Information
Summary:Thin films of p-doped amorphous SiC used as an emitter layer for heterojunction solar cells have been the subject of this work. Thin amorphous SiC films were prepared by PECVD technology. Impact of dopation on the resulting properties of heterojunction was the main object of this study. The DC measurements under dark were performed in order to detect basic electronic properties as a diode ideality factor and saturation current. PV parameters such as fill factor, open circuit voltage and efficiency were obtained from DC measurements under illumination. The impedance spectroscopy analysis was performed by following Cole-Cole principle.
DOI:10.1109/EPE.2015.7161115