Chemical dry cleaning technology for reliable 65 nm CMOS contact to NiSi/sub x

• Published in: Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 pp. 194 - 196
• Main Authors: Honda, M., Tsutsumi, K., Harakawa, H., Nomachi, A., Murakami, K., Ooya, K., Kudou, T., Nagamatsu, T., Ezawa, H.
• Format: Conference Proceeding
• Language: English; Japanese
• Published: IEEE 30.08.2005
• Subjects: Chemical technology; Cleaning; CMOS technology; Contact resistance; Manufacturing; Metallization; Nickel; Silicides; Surface resistance; Surface treatment
• ISBN: 078038752X; 9780780387522
• ISSN: 2380-632X
• DOI: 10.1109/IITC.2005.1499977

Nickel silicide (NiSi/sub x/) is being considered as a replacement for the currently used silicides. A native oxide film on the nickel silicide surface causes high contact resistance. The cleaning technology for removal of the oxide film on NiSi/sub x/ is a critical issue for 65 nm generation CMOS devices. The effect of a chemical dry treatment prior to contact metallization was studied. It was confirmed that the chemical dry treatment is effective for obtaining low stable contact resistance, and is a key technology for the high yield manufacture of CMOS devices.