Chemical dry cleaning technology for reliable 65 nm CMOS contact to NiSi/sub x

Nickel silicide (NiSi/sub x/) is being considered as a replacement for the currently used silicides. A native oxide film on the nickel silicide surface causes high contact resistance. The cleaning technology for removal of the oxide film on NiSi/sub x/ is a critical issue for 65 nm generation CMOS d...

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Bibliographic Details
Published inProceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 pp. 194 - 196
Main Authors Honda, M., Tsutsumi, K., Harakawa, H., Nomachi, A., Murakami, K., Ooya, K., Kudou, T., Nagamatsu, T., Ezawa, H.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 30.08.2005
Subjects
Chemical technology
Cleaning
CMOS technology
Contact resistance
Manufacturing
Metallization
Nickel
Silicides
Surface resistance
Surface treatment
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ISBN078038752X
9780780387522
ISSN2380-632X
DOI10.1109/IITC.2005.1499977

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Summary:Nickel silicide (NiSi/sub x/) is being considered as a replacement for the currently used silicides. A native oxide film on the nickel silicide surface causes high contact resistance. The cleaning technology for removal of the oxide film on NiSi/sub x/ is a critical issue for 65 nm generation CMOS devices. The effect of a chemical dry treatment prior to contact metallization was studied. It was confirmed that the chemical dry treatment is effective for obtaining low stable contact resistance, and is a key technology for the high yield manufacture of CMOS devices.
ISBN:078038752X
9780780387522
ISSN:2380-632X
DOI:10.1109/IITC.2005.1499977