APA (7th ed.) Citation

Honda, M., Tsutsumi, K., Harakawa, H., Nomachi, A., Murakami, K., Ooya, K., . . . Ezawa, H. (2005, August 30). Chemical dry cleaning technology for reliable 65 nm CMOS contact to NiSi/sub x. Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 194-196. https://doi.org/10.1109/IITC.2005.1499977

Chicago Style (17th ed.) Citation

Honda, M., K. Tsutsumi, H. Harakawa, A. Nomachi, K. Murakami, K. Ooya, T. Kudou, T. Nagamatsu, and H. Ezawa. "Chemical Dry Cleaning Technology for Reliable 65 Nm CMOS Contact to NiSi/sub X." Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 30 Aug. 2005: 194-196. https://doi.org/10.1109/IITC.2005.1499977.

MLA (9th ed.) Citation

Honda, M., et al. "Chemical Dry Cleaning Technology for Reliable 65 Nm CMOS Contact to NiSi/sub X." Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 30 Aug. 2005, pp. 194-196, https://doi.org/10.1109/IITC.2005.1499977.