Koga, R., Crain, S., Crawford, K., & Yu, P. (2001). Heavy ion induced hard errors in memory devices with sub-micron feature sizes. 2001 6th European Conference on Radiation and Its Effects on Components and Systems, 423-430. https://doi.org/10.1109/RADECS.2001.1159317
Chicago Style (17th ed.) CitationKoga, R., S. Crain, K. Crawford, and P. Yu. "Heavy Ion Induced Hard Errors in Memory Devices with Sub-micron Feature Sizes." 2001 6th European Conference on Radiation and Its Effects on Components and Systems 2001: 423-430. https://doi.org/10.1109/RADECS.2001.1159317.
MLA (9th ed.) CitationKoga, R., et al. "Heavy Ion Induced Hard Errors in Memory Devices with Sub-micron Feature Sizes." 2001 6th European Conference on Radiation and Its Effects on Components and Systems, 2001, pp. 423-430, https://doi.org/10.1109/RADECS.2001.1159317.