Heavy ion induced hard errors in memory devices with sub-micron feature sizes

High density memory devices are sensitive to heavy ions resulting in hard errors (stuck bits). Even though their sensitivities vary, these devices with sub-micron feature sizes are not strongly affected by ion induced hard errors without any accumulation of total dose. However, their sensitivity to...

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Bibliographic Details
Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 423 - 430
Main Authors Koga, R., Crain, S., Crawford, K., Yu, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Annealing
Capacitors
DRAM chips
Leakage current
MOS devices
Radiation effects
Random access memory
SRAM chips
Temperature
Threshold voltage
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ISBN9780780373136
0780373138
DOI10.1109/RADECS.2001.1159317

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Summary:High density memory devices are sensitive to heavy ions resulting in hard errors (stuck bits). Even though their sensitivities vary, these devices with sub-micron feature sizes are not strongly affected by ion induced hard errors without any accumulation of total dose. However, their sensitivity to stuck bits appears to rise as the total dose increases to a certain level.
ISBN:9780780373136
0780373138
DOI:10.1109/RADECS.2001.1159317