Ruthenium interconnects with 58 nm2 cross-section area using a metal-spacer process

Platinum-group metals have emerged as promising alternatives to replace Cu in scaled interconnects. Here, we present a short-loop test vehicle to fabricate metal nanowires with sub-100 nm 2 cross-section area without the need for multiple patterning or CMP. Ru nanowires with 58 nm 2 cross-section ar...

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Bibliographic Details
Published inProceedings of the IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Dutta, Shibesh, Kundu, Shreya, Lianggong Wen, Jamieson, Geraldine, Croes, Kristof, Gupta, Anshul, Bommels, Jurgen, Wilson, Christopher J., Adelmann, Christoph, Tokei, Zsolt
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2017
Subjects
Conductivity
Current density
Electrical resistance measurement
interconnects
metallic spacer
Metals
Nanowires
Resistance
Ruthenium
Temperature measurement
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ISSN2380-6338
DOI10.1109/IITC-AMC.2017.7968937

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Summary:Platinum-group metals have emerged as promising alternatives to replace Cu in scaled interconnects. Here, we present a short-loop test vehicle to fabricate metal nanowires with sub-100 nm 2 cross-section area without the need for multiple patterning or CMP. Ru nanowires with 58 nm 2 cross-section area, as determined by the TCR method, were realized and characterized by transmission electron microscopy and electrical measurements. The nanowires demonstrate low resistivity (27 μΩcm) and very high current carrying capacity with fusing currents as high as 720 MA/cm 2 .
ISSN:2380-6338
DOI:10.1109/IITC-AMC.2017.7968937