Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL

• Published in: Proceedings of the IEEE International Interconnect Technology Conference pp. 78 - 80
• Main Authors: Lacrevaz, T., Flechet, B., Farcy, A., Torres, J., Vo, T.T., Bermond, C., Cueto, O., Defay, E., Gros-Jean, M., Blampey, B., Angenieux, G., Piquet, J., de Crecy, F.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2006
• Subjects: Dielectrics and electrical insulation; High K dielectric materials; High speed integrated circuits; High-K gate dielectrics; Mechanical factors; MIM capacitors; Permittivity; Radio frequency; Resonance; Wideband
• ISBN: 1424401046; 9781424401048
• ISSN: 2380-632X
• DOI: 10.1109/IITC.2006.1648651

High permittivity insulators (high-k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuit performances. However, high-k properties are expected to vary with frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate high-k behaviour from DC to microwave frequency. Real permittivity (K or epsiv' r ) and losses (eepsiv" r ) extraction is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin (down to 60 nm) planar dielectrics integrated below a copper coplanar wave-guide up to 40 GHz. Results of Ta 2 O 5 and STO insulators are presented in this paper