Improving an SEU hard design using a pulsed laser

The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more de...

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Bibliographic Details
Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 243 - 247
Main Authors Dutertre, J.M., Roche, F.M., Fouillat, P., Lewis, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Circuit testing
CMOS technology
Design optimization
Flip-flops
Logic
Optical design
Optical pulses
Radiation hardening
Robustness
Single event upset
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ISBN9780780373136
0780373138
DOI10.1109/RADECS.2001.1159287

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Summary:The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.
ISBN:9780780373136
0780373138
DOI:10.1109/RADECS.2001.1159287