Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature

The effect of high temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in this paper show two base current degradation peaks as a function of irradiation temperature. An attempt to physically explain the obtained ex...

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Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems Vol. 49; no. 3; pp. 357 - 362
Main Authors Boch, J., Saigne, F., Maurel, T., Giustino, F., Dusseau, L., Schrimpf, R.D., Galloway, K.F., David, J.P., Ecoffet, R., Fesquet, J., Gasiot, J.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.06.2002
Institute of Electrical and Electronics Engineers
Subjects
Degradation
Electromagnetic scattering
Electronics
Engineering Sciences
Environmental economics
Filters
Interface states
Kinetic theory
Particle scattering
Temperature
Testing
USA Councils
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ISBN9780780373136
0780373138
ISSN0018-9499
1558-1578
DOI10.1109/RADECS.2001.1159307

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Summary:The effect of high temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in this paper show two base current degradation peaks as a function of irradiation temperature. An attempt to physically explain the obtained experimental results is proposed. This explanation is based on the difference in the enhancement-annealing kinetic of the elementary processes at play. The combined effects of high irradiation temperatures and dose rate are also discussed.
ISBN:9780780373136
0780373138
ISSN:0018-9499
1558-1578
DOI:10.1109/RADECS.2001.1159307