Spectromicroscopy of ultrathin Pd films on W(1 1 0):: interplay of morphology and electronic structure

• Published in: Applied surface science Vol. 238; no. 1-4; pp. 138 - 142
• Main Authors: Aballe, L., Barinov, A., Locatelli, A., Heun, S., Cherifi, S., Kiskinova, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.11.2004; Elsevier Science
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; LEEM; Metals. Metallurgy; Morphology; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Ultrathin Pd films; XPEEM; 68.37.Nq; 68.55.−a; LEEM; Electronic structure; 73.20.At; Ultrathin Pd films; 79.60.Dp; Morphology; XPEEM; Ultrathin films; Photoelectron microscopy; 68.55.-a Ultrathin Pd films; 79.60.Dp: 68.37.Nq; Palladium; Electron microscopy; Surface structure; LEED
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.05.198

We have studied the growth of Pd thin films on W(110), by means of low-energy electron microscopy (LEEM), X-ray photoelectron microscopy (XPEEM), and microspot low-energy electron diffraction (μLEED). Real-time LEEM measurements of the evolution of the film morphology as a function of deposition time showed substantial differences in the growth mechanism at 380 and 1000K. Imaging the valence band structure with spatial resolution of 60nm revealed clear differences for the interfacial monolayer film and the 3D islands growing on top at 1000K. The observed spatial variations in the electronic structure are attributed to bonding, structural and electron confinement effects.