Deuterium Retention in the Co-Deposition Carbon Layers Deposited by Radio-Frequency Magnetron Sputtering in D2 Atmosphere
Carbon is deposited on C and Si substrates by rf magnetron plasma sputtering in a D2 atmosphere. The deposited layers are examined with ion beam analysis and thermal desorption spectroscopy （TDS）. The growth rates of the layers deposited on Si decrease with increasing substrate temperature, while in...
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| Published in | 中国物理快报：英文版 no. 5; pp. 42 - 46 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/31/5/052901 |
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| Summary: | Carbon is deposited on C and Si substrates by rf magnetron plasma sputtering in a D2 atmosphere. The deposited layers are examined with ion beam analysis and thermal desorption spectroscopy （TDS）. The growth rates of the layers deposited on Si decrease with increasing substrate temperature, while increase significantly with the increase of D2 pressure. Meanwhile, the deuterium concentrations in the layers deposited on the Si substrates decrease front 30% to 2% and front 31% to 1% on the C substrates, respectively, when the substratc temperature varies from 350K to 90OK. Similarly, the D concentration in the layer on the Si substrates increases from 3.4% to 47%, and from 8% to 35% on the C substrates when the D2 pressure increases from 0.3Pa to 8.OPa. D desorption characterized by TDS is mainly in the forms of D2, HD, HDO, CD4, and C2D4, and a similar release peak occm% at 645K. The release peak olD2 molecules at 960K can be attributed to the escaped gas from the thin co-deposited deuterium-rich carbon layer in the form of C D bonding. |
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| Bibliography: | Carbon is deposited on C and Si substrates by rf magnetron plasma sputtering in a D2 atmosphere. The deposited layers are examined with ion beam analysis and thermal desorption spectroscopy （TDS）. The growth rates of the layers deposited on Si decrease with increasing substrate temperature, while increase significantly with the increase of D2 pressure. Meanwhile, the deuterium concentrations in the layers deposited on the Si substrates decrease front 30% to 2% and front 31% to 1% on the C substrates, respectively, when the substratc temperature varies from 350K to 90OK. Similarly, the D concentration in the layer on the Si substrates increases from 3.4% to 47%, and from 8% to 35% on the C substrates when the D2 pressure increases from 0.3Pa to 8.OPa. D desorption characterized by TDS is mainly in the forms of D2, HD, HDO, CD4, and C2D4, and a similar release peak occm% at 645K. The release peak olD2 molecules at 960K can be attributed to the escaped gas from the thin co-deposited deuterium-rich carbon layer in the form of C D bonding. 11-1959/O4 ZHANG Wei-Yuan, SHI Li-Qun, ZHANG Bin, HU dian-Sheng（ 1 Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Pudan University, Shanghai 200433 2Department of Nuclear Science and Technology, Fudan University, Shanghai 200433 3Institute of Plasma Physics, Chinese Academic of Sciences, Hefei 230031） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/31/5/052901 |