Ultra-long coherence times amongst room-temperature solid-state spins
Solid-state single spins are promising resources for quantum sensing, quantum-information processing and quantum networks, because they are compatible with scalable quantum-device engineering. However, the extension of their coherence times proves challenging. Although enrichment of the spin-zero 12...
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| Published in | Nature communications Vol. 10; no. 1; pp. 3766 - 6 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
28.08.2019
Nature Publishing Group Nature Portfolio |
| Subjects | |
| Online Access | Get full text |
| ISSN | 2041-1723 2041-1723 |
| DOI | 10.1038/s41467-019-11776-8 |
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| Summary: | Solid-state single spins are promising resources for quantum sensing, quantum-information processing and quantum networks, because they are compatible with scalable quantum-device engineering. However, the extension of their coherence times proves challenging. Although enrichment of the spin-zero
12
C and
28
Si isotopes drastically reduces spin-bath decoherence in diamond and silicon, the solid-state environment provides deleterious interactions between the electron spin and the remaining spins of its surrounding. Here we demonstrate, contrary to widespread belief, that an impurity-doped (phosphorus) n-type single-crystal diamond realises remarkably long spin-coherence times. Single electron spins show the longest inhomogeneous spin-dephasing time (
T
2
*
≈
1.5
ms) and Hahn-echo spin-coherence time (
T
2
≈ 2.4 ms) ever observed in room-temperature solid-state systems, leading to the best sensitivities. The extension of coherence times in diamond semiconductor may allow for new applications in quantum technology.
The coherence times of nitrogen-vacancy centres are key factors influencing their performance in quantum applications. Here the authors show that synthesising phosphorus-doped diamond yields nitrogen-vacancy centres with significantly improved
T
2
*
and
T
2
. |
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| Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| ISSN: | 2041-1723 2041-1723 |
| DOI: | 10.1038/s41467-019-11776-8 |