Ultra-long coherence times amongst room-temperature solid-state spins

Solid-state single spins are promising resources for quantum sensing, quantum-information processing and quantum networks, because they are compatible with scalable quantum-device engineering. However, the extension of their coherence times proves challenging. Although enrichment of the spin-zero 12...

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Published inNature communications Vol. 10; no. 1; pp. 3766 - 6
Main Authors Herbschleb, E. D., Kato, H., Maruyama, Y., Danjo, T., Makino, T., Yamasaki, S., Ohki, I., Hayashi, K., Morishita, H., Fujiwara, M., Mizuochi, N.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 28.08.2019
Nature Publishing Group
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ISSN2041-1723
2041-1723
DOI10.1038/s41467-019-11776-8

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Summary:Solid-state single spins are promising resources for quantum sensing, quantum-information processing and quantum networks, because they are compatible with scalable quantum-device engineering. However, the extension of their coherence times proves challenging. Although enrichment of the spin-zero 12 C and 28 Si isotopes drastically reduces spin-bath decoherence in diamond and silicon, the solid-state environment provides deleterious interactions between the electron spin and the remaining spins of its surrounding. Here we demonstrate, contrary to widespread belief, that an impurity-doped (phosphorus) n-type single-crystal diamond realises remarkably long spin-coherence times. Single electron spins show the longest inhomogeneous spin-dephasing time ( T 2 * ≈ 1.5  ms) and Hahn-echo spin-coherence time ( T 2  ≈ 2.4 ms) ever observed in room-temperature solid-state systems, leading to the best sensitivities. The extension of coherence times in diamond semiconductor may allow for new applications in quantum technology. The coherence times of nitrogen-vacancy centres are key factors influencing their performance in quantum applications. Here the authors show that synthesising phosphorus-doped diamond yields nitrogen-vacancy centres with significantly improved T 2 * and T 2 .
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-11776-8