Kinetic process of nitridation on the a-sapphire surface

We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE syste...

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Published inJournal of semiconductors Vol. 35; no. 11; pp. 184 - 187
Main Author 汤星舟 李书平 康俊勇 陈佳琪
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Computer simulation
Dynamical systems
Dynamics
Electron diffraction
Molecular dynamics
Monte Carlo methods
Reflection
Semiconductors
分子动力学方法
动力学过程
反射高能电子衍射
氮化
生长过程
结合动力学
蓝宝石
表面
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/35/11/116004

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Abstract We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on s-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the a-sapphire surface are found by our simulation.
AbstractList We established a model to simulate the growth process of nitridation and clarified the inner mechanisms of nitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on [alpha]-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the [alpha]-sapphire surface are found by our simulation.
We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on s-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the a-sapphire surface are found by our simulation.
Author 汤星舟 李书平 康俊勇 陈佳琪
AuthorAffiliation Department of Physics, Xiamen University, Xiamen 361005, China Key Laboratory of Semiconductor Materials and Application of Fujian Province, Xiamen 361005, China
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Notes Tang Xingzhou, Li Shuping, Kang Junyong, Chen Jiaqi（1 Department of Physics, Xiamen University, Xiamen 361005, China 2Key Laboratory of Semiconductor Materials and Application of Fujian Province, Xiamen 361005, China）
nitridation; kinetic Monte Carlo （KMC）; molecular dynamics （MD）; molecular beam epitaxy （MBE）;reflection high-energy electron diffraction （RHEED）
11-5781/TN
We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on s-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the a-sapphire surface are found by our simulation.
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Snippet We established a model to simulate the growth process of nitridation and clarified the inner mechanisms ofnitridation and over-nitridation by combining the...
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SubjectTerms Computer simulation
Dynamical systems
Dynamics
Electron diffraction
Molecular dynamics
Monte Carlo methods
Reflection
Semiconductors
分子动力学方法
动力学过程
反射高能电子衍射
氮化
生长过程
结合动力学
蓝宝石
表面
Title Kinetic process of nitridation on the a-sapphire surface
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