功率MOSFET雪崩能量及雪崩失效分析

首先阐述了传统测试条件下功率MOSFET管的数据表中雪崩能量值的缺陷,然后讨论了针对实际应用对应着不同的测试电感值时,功率MOSFET雪崩能量的变化及特性,给出了相应的测试波形。同时,通过不同条件下功率MOSFET管雪崩失效的显微图片,详细地分析了相应的雪崩特性和产生的原因。在小电感条件下,大电流快速关断是功率MOSFET管雪崩最为恶劣的情况。...

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Bibliographic Details
Published in电子技术应用 Vol. 42; no. 4; pp. 132 - 134
Main Author 刘松 杨营
Format Journal Article
LanguageChinese
Published 万国半导体元件有限公司,上海,200070 2016
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ISSN0258-7998
DOI10.16157/j.issn.0258-7998.2016.04.036

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Summary:首先阐述了传统测试条件下功率MOSFET管的数据表中雪崩能量值的缺陷,然后讨论了针对实际应用对应着不同的测试电感值时,功率MOSFET雪崩能量的变化及特性,给出了相应的测试波形。同时,通过不同条件下功率MOSFET管雪崩失效的显微图片,详细地分析了相应的雪崩特性和产生的原因。在小电感条件下,大电流快速关断是功率MOSFET管雪崩最为恶劣的情况。
Bibliography:avalanche; unclamped inductance switching; failure analysis; over voltage
Liu Song, Yang Ying (Alpha & Omega Semiconductor, Ltd. ,Shanghai 200070, China)
11-2305/TN
The reason that the avalanche energy value in the power MOSFET datasheet is not effective is given in this pare at first. The variation of the avalanche energy value with different used inductance and waveforms are presented. The characteristic of the avalanche energy of power MOSFET and the cause at the different inductance are also discussed based on their de- capped failure analysis. The worst condition of power MOSFET avalanche that the power MOSFET is turned off very fast with very huge current and at very small inductance is given in the end.
ISSN:0258-7998
DOI:10.16157/j.issn.0258-7998.2016.04.036