基于SiGe HBT的38GHz功率放大器设计

功率放大器（Power Amplifier,PA）是射频前端关键的模块,基于0.13μm SiGe HBT工艺,设计了一款38 GHz功率放大器。提出了HBT集电极寄生电容和传输线谐振的方法减小芯片面积,针对毫米波频段下,晶体管可获得最大增益较低,采用堆叠晶体管提高了功率放大器的增益,同时通过优化有源器件参数,提高了功率放大器的输出功率和效率。仿真结果显示,在4 V的供电电压下,工作在38 GHz的功率放大器1 dB压缩点输出功率为17.8 d Bm,功率增益为19.0 dB,功率附加效率为32.3%,功耗为252 mW。...

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Bibliographic Details
Published in电子技术应用 Vol. 42; no. 2; pp. 36 - 38
Main Author 邸士伟 刘昱 李志强 张海英
Format Journal Article
LanguageChinese
Published 中国科学院微电子研究所“新一代通信射频芯片技术”北京市重点实验室,北京,100029 2016
Subjects
38
GHz
HBT
功率放大器
有源偏置
有源偏置
active baising
HBT
功率放大器
power amplifier(PA)
38 GHz
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ISSN0258-7998
DOI10.16157/j.issn.0258-7998.2016.02.009

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Summary:功率放大器（Power Amplifier,PA）是射频前端关键的模块,基于0.13μm SiGe HBT工艺,设计了一款38 GHz功率放大器。提出了HBT集电极寄生电容和传输线谐振的方法减小芯片面积,针对毫米波频段下,晶体管可获得最大增益较低,采用堆叠晶体管提高了功率放大器的增益,同时通过优化有源器件参数,提高了功率放大器的输出功率和效率。仿真结果显示,在4 V的供电电压下,工作在38 GHz的功率放大器1 dB压缩点输出功率为17.8 d Bm,功率增益为19.0 dB,功率附加效率为32.3%,功耗为252 mW。
Bibliography:Power Amplifier（PA） is an important unit in the RF front-ends. A 38 GHz power amplifier is designed based on 0. 13 μm SiGe HBT process. This paper proposed a method to decrease chip area. Due to the low maximum stable gain of transistors in millimeter wave frequency band, stacked HBT structure is utilized to improve power gain of the PA. High output power, gain, and efficiency are achieved by optimizing the active devices. The simulation results show that the PA achieves an output 1 dB compres-sion point power of 17. 8 d Bm, power gain of 19. 0 dB, power add efficiency（ PAE） of 32. 3 % at 1 dB compression point, and has252 mW power dissipation.
power amplifier（PA）; 38 GHz; HBT; active baising
Di Shiwei, Liu Yu, Li Zhiqiang, Zhang Haiying （Beijing Key Laboratory of Radio Frequency IC Technology for Next Generation Communications, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China）
11-2305/TN
ISSN:0258-7998
DOI:10.16157/j.issn.0258-7998.2016.02.009