AlGaN基p-i-n光电探测器负响应现象研究
对AlGaN基p-i-n光电探测器的负光电响应特性进行研究,从实验上证实了器件中p型接触电极的肖特基特性是导致该现象的主导因素.不同偏压下的响应光谱表明,这些AlGaN光伏器件中存在较为明显的光导响应特性.光照和暗背景条件下的C-f曲线验证了器件中的持续光电导特性,而高铝组分铝镓氮材料内存在的大量缺陷被认为是该现象的起因.系统地研究了AlGaN基p-i-n光电探测器存在的负响应现象及其微观机理,为铝镓氮基日盲器件光电性能的优化提供了重要参考依据....
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| Published in | 红外与毫米波学报 Vol. 33; no. 4; pp. 386 - 390 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083
2014
中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 中国科学院大学,北京100039%中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2014.00386 |
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| Summary: | 对AlGaN基p-i-n光电探测器的负光电响应特性进行研究,从实验上证实了器件中p型接触电极的肖特基特性是导致该现象的主导因素.不同偏压下的响应光谱表明,这些AlGaN光伏器件中存在较为明显的光导响应特性.光照和暗背景条件下的C-f曲线验证了器件中的持续光电导特性,而高铝组分铝镓氮材料内存在的大量缺陷被认为是该现象的起因.系统地研究了AlGaN基p-i-n光电探测器存在的负响应现象及其微观机理,为铝镓氮基日盲器件光电性能的优化提供了重要参考依据. |
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| Bibliography: | LIU Fu-Hao, XU Jin-Tong, LIU Fei, WANG Li-Wei, ZHANG Yan, LI Xiang-Yang （ 1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 2. Key Laboratory of Infrared Im aging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 3. University of Chinese Academy of Sciences, Beijing 100039, China） 31-1577/TN The negative photoresponse characteristics in AlGaN-based p-i-n photodetector have been studied in this pa- per. The Schottcky contact behavor of p electrode was confirmed to be responsible for this phenomenon. The abnormal photoconductor characteristic was observed in AlGaN photovoltage device under different biases. The persistent photoconductivity characteristic was verified with the capacitance-frequencies experiment under both illumination and dark conditions. The large amount of defects in AlGaN material are considered to be the source of this phenomenon. Th |
| ISSN: | 1001-9014 |
| DOI: | 10.3724/SP.J.1010.2014.00386 |