基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源
基于南京电子器件研究所（NEDI）的GaAs工艺线，通过分析器件的有源层（缓冲层、外延层）材料掺杂浓度和厚度、肖特基接触面积等，综合优化二极管性能，研制出了截止频率为3.2THz的太赫兹变阻二极管.基于该二极管，通过建立其三维场结构，采用电磁场和电路仿真软件相结合的方法，一体化设计匹配电路和器件，研制出了D波段和G波段倍频源.D波段二倍频器在152.6GHz测得最高倍频效率为2.7%，在147.4～155GHz效率典型值为1.3%.G波段二倍频器在172GHz测得最高倍频效率为 2.1%，在150～200GHz效率典型值为1.0%....
Saved in:
| Published in | 红外与毫米波学报 Vol. 33; no. 3; pp. 256 - 262 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016
2014
南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016%南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京,210016 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2014.00256 |
Cover
| Abstract | 基于南京电子器件研究所（NEDI）的GaAs工艺线，通过分析器件的有源层（缓冲层、外延层）材料掺杂浓度和厚度、肖特基接触面积等，综合优化二极管性能，研制出了截止频率为3.2THz的太赫兹变阻二极管.基于该二极管，通过建立其三维场结构，采用电磁场和电路仿真软件相结合的方法，一体化设计匹配电路和器件，研制出了D波段和G波段倍频源.D波段二倍频器在152.6GHz测得最高倍频效率为2.7%，在147.4～155GHz效率典型值为1.3%.G波段二倍频器在172GHz测得最高倍频效率为 2.1%，在150～200GHz效率典型值为1.0%. |
|---|---|
| AbstractList | 基于南京电子器件研究所（NEDI）的GaAs工艺线，通过分析器件的有源层（缓冲层、外延层）材料掺杂浓度和厚度、肖特基接触面积等，综合优化二极管性能，研制出了截止频率为3.2THz的太赫兹变阻二极管.基于该二极管，通过建立其三维场结构，采用电磁场和电路仿真软件相结合的方法，一体化设计匹配电路和器件，研制出了D波段和G波段倍频源.D波段二倍频器在152.6GHz测得最高倍频效率为2.7%，在147.4～155GHz效率典型值为1.3%.G波段二倍频器在172GHz测得最高倍频效率为 2.1%，在150～200GHz效率典型值为1.0%. TN77; 基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2 THz的太赫兹变阻二极管.基于该二极管,通过建立其三维场结构,采用电磁场和电路仿真软件相结合的方法,一体化设计匹配电路和器件,研制出了D波段和G波段倍频源.D波段二倍频器在152.6 GHz测得最高倍频效率为2.7％,在147.4～155 GHz效率典型值为1.3％.G波段二倍频器在172 GHz测得最高倍频效率为2.1％,在150～200 GHz效率典型值为1.0％. |
| Author | 姚常飞 周明 罗运生 林罡 李姣 许从海 寇亚男 吴刚 王继财 |
| AuthorAffiliation | 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016 |
| AuthorAffiliation_xml | – name: 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016;南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016%南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京,210016 |
| Author_xml | – sequence: 1 fullname: 姚常飞 周明 罗运生 林罡 李姣 许从海 寇亚男 吴刚 王继财 |
| BookMark | eNotj7tOAkEUhqfARETewMbKatczt52ZUgERQ9REejKzF8DIohBD6NTYmKDxEiksvPAANMYYeR7ZlbdwFar__P_5ck7-JZQKW6GP0AoGmwrC1g_27R0bQ2IJYGYDEO6kUBoDYEslySLKdjoNA1gwobCSabQ5eRl_j292C_lS_Po56Q-mjw8_F4P46ut_0Y-ez-PRW_x0mY_eh9HoY3LfL86ns-vp8C4a3y6jhUAfdfzsXDOoslWo5Lat8l6xlNsoWy6XypK-wA4NtOTKOEwIA8wxhnpSSB4Yj0qiRUCN4gYS40vjK6EV5x7DrvY9QjNobXa2q8NAh7XqYeu0HSYPq_Vur940f42BAqiEXJ2Rbr0V1k4aCXvcbjR1u1flQCimjNBfeXNtyw |
| ClassificationCodes | TN77 |
| ContentType | Journal Article |
| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
| Copyright_xml | – notice: Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
| DBID | 2RA 92L CQIGP W92 ~WA 2B. 4A8 92I 93N PSX TCJ |
| DOI | 10.3724/SP.J.1010.2014.00256 |
| DatabaseName | 中文期刊服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 Wanfang Data Journals - Hong Kong WANFANG Data Centre Wanfang Data Journals 万方数据期刊 - 香港版 China Online Journals (COJ) China Online Journals (COJ) |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Applied Sciences |
| DocumentTitleAlternate | Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI |
| DocumentTitle_FL | Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI |
| EndPage | 262 |
| ExternalDocumentID | hwyhmb201403009 50231342 |
| GroupedDBID | 2B. 2C0 2RA 5VS 92H 92I 92L ACGFS AENEX ALMA_UNASSIGNED_HOLDINGS CQIGP CW9 DU5 GROUPED_DOAJ IPNFZ KQ8 OK1 RIG RNS TCJ TGT U1G U5S W92 ~WA 4A8 5XA 5XJ 93N ABJNI PSX |
| ID | FETCH-LOGICAL-c589-8e7163fa859b6477b046bb3d8785fbd382a7f3b95b0d38e8be97a955d41caed23 |
| ISSN | 1001-9014 |
| IngestDate | Thu May 29 04:20:08 EDT 2025 Wed Feb 14 10:35:25 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 3 |
| Keywords | 太赫兹 GaAs Schottky diode multipliers 倍频器 Terahertz GaAs肖特基二极管 |
| Language | Chinese |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c589-8e7163fa859b6477b046bb3d8785fbd382a7f3b95b0d38e8be97a955d41caed23 |
| Notes | 31-1577/TN Terahertz, GaAs Schottky diode, multipliers Terahertz Schottky varistor diode with cutoff frequency of 3.2THz was developed based on GaAs process of Nanjing Electronic Devices Institute （NEDI）. The performances of diodes are optimized by optimization of active layer （expital layer and buffer layer） doping, thickness, and Schottky contact area. Physical structure of the nonlinear diode was setup, and EM software and circuit software were combined together for impedance matching analysis. For the D-band doubler, highest measured multiply efficiency is 2.7% at 152.6GHz, and typical efficiency is 1.3% in 147.4～155GHz. For the G-band doubler, highest measured multiply efficiency is 2.1% at 172GHz, and typical efficiency is 1.0% in 150～200GHz. YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, LIN Gang, LI Jiao, XU Cong-Hai, KOU Ya-Nan, WU Gang, WANG Ji-Cai （1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China; 2. Department of |
| PageCount | 7 |
| ParticipantIDs | wanfang_journals_hwyhmb201403009 chongqing_primary_50231342 |
| PublicationCentury | 2000 |
| PublicationDate | 2014 |
| PublicationDateYYYYMMDD | 2014-01-01 |
| PublicationDate_xml | – year: 2014 text: 2014 |
| PublicationDecade | 2010 |
| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2014 |
| Publisher | 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016%南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京,210016 |
| Publisher_xml | – name: 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 – name: 南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016%南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京,210016 |
| SSID | ssib017479198 ssib038074669 ssj0039469 ssib051375082 ssib007291925 ssib002806809 ssib023167203 ssib008143719 ssib000862495 |
| Score | 2.0223193 |
| Snippet | 基于南京电子器件研究所（NEDI）的GaAs工艺线，通过分析器件的有源层（缓冲层、外延层）材料掺杂浓度和厚度、肖特基接触面积等，综合优化二极管性能，研制出了截止频率... TN77; 基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2... |
| SourceID | wanfang chongqing |
| SourceType | Aggregation Database Publisher |
| StartPage | 256 |
| SubjectTerms | GaAs肖特基二极管 倍频器 太赫兹 |
| Title | 基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源 |
| URI | http://lib.cqvip.com/qk/95821A/201403/50231342.html https://d.wanfangdata.com.cn/periodical/hwyhmb201403009 |
| Volume | 33 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVAFT databaseName: Open Access Digital Library issn: 1001-9014 databaseCode: KQ8 dateStart: 20090101 customDbUrl: isFulltext: true dateEnd: 99991231 titleUrlDefault: http://grweb.coalliance.org/oadl/oadl.html omitProxy: true ssIdentifier: ssj0039469 providerName: Colorado Alliance of Research Libraries |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnR3LbhMxcFWVCxfeCMpDOeBjStavHR93k01LJSqQitRbtLvZNBdSoK0QPQHiglQQD9EDBx79gF4QQvR7aEL_ghmvk2wfiIcUrZyZ8Xg8M7I9lj32vGuQJEJpSKpZLlVVqgyqkIpatZMZxVMMSGRCd4dvzuvZO3JuUS1OTPqlU0trq-l0tn7kvZL_sSrC0K50S_YfLDtiigAso33xixbG71_ZmMWKmSaLQhZL-kI8HzdusDhgYY1FAaGhzoxmsWEGSQWLgQG3kICBYZE5xKLOYs1MjCtMyydmoS0YRMkG4SLBQk4FxEXK1udYbeZoHNQYNKh9hBvf0oSseLpzuCYm9gikioqF0kqHsqCksWXVZGFkaXziP24FiRss1AQBrK6GvmMxVmIsIBv8UfsCe1UmQWlCsJ2llsYYbKjBTECqipooqu09StUck1gFEYmlDf3y1ok_3jS1_S94Wd2GdcerUA1KT9xREmMlQXjEIu3Mh2RUMBaiyVhgiaOYlLtP179XELWunK0hsG4QMSgYwrB17oyOMpCtEdJwnXOiAvkSthJbJmTOgLyocB4UBpVBCi6cx0LQitzyRJHQu8jrsN3mYYVwSs6lSzMjnb0zQyW6qbPIYeKGCFGeB5UuLal4MeEenK1FwCWdF7g1PUebSDU6aEm57EeV9-VB7z581L2bEgnOS3Rl9xinLTg6h3G7HFFo95r6-OBAOUMdxpK-KU1hgPFCMM5oyCkxROlgAj3HILUe4ZUvcIkNowx1wkj7auZIO8XtXOrZ9aP6RRlcusu9pfu4LrXXBHudpLdUWtEunPJOuFC0EhbjymlvYr17xjvpwtKKm_RXznrR7sedHzsvaWgZfPq2u7G59-7tz6ebg-ffLWKj_-HJYPvz4P2zRv_LVn_76-6bjRlXevxib-t1f-fVOW-hGS_UZ6vu6ZVqpsBUIQ8wTuskoExKN9XTmtRpKtoQgOqkbQE8CToiNSqt4Z8c0twEiVGqLf0sydtcnPcme8u9_IJXwfBTdiDVQotcal9DkHTQfFnCgevEmIve1EgjrXtFhp2WIkMIyS96Faeilht2V1oH_GDqzySXvONULjZOL3uTqw_W8isYSqymV63z_AJx188E |
| linkProvider | Colorado Alliance of Research Libraries |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=%E5%9F%BA%E4%BA%8ENEDI%E7%A0%B7%E5%8C%96%E9%95%93%E8%82%96%E7%89%B9%E5%9F%BA%E4%BA%8C%E6%9E%81%E7%AE%A1%E7%9A%84D%E6%B3%A2%E6%AE%B5%E5%92%8CG%E6%B3%A2%E6%AE%B5%E5%80%8D%E9%A2%91%E6%BA%90&rft.jtitle=%E7%BA%A2%E5%A4%96%E4%B8%8E%E6%AF%AB%E7%B1%B3%E6%B3%A2%E5%AD%A6%E6%8A%A5&rft.au=%E5%A7%9A%E5%B8%B8%E9%A3%9E&rft.au=%E5%91%A8%E6%98%8E&rft.au=%E7%BD%97%E8%BF%90%E7%94%9F&rft.au=%E6%9E%97%E7%BD%A1&rft.date=2014&rft.pub=%E5%8D%97%E4%BA%AC%E7%94%B5%E5%AD%90%E5%99%A8%E4%BB%B6%E7%A0%94%E7%A9%B6%E6%89%80%E5%BE%AE%E6%B3%A2%E6%AF%AB%E7%B1%B3%E6%B3%A2%E5%8D%95%E7%89%87%E9%9B%86%E6%88%90%E5%92%8C%E6%A8%A1%E5%9D%97%E7%94%B5%E8%B7%AF%E9%87%8D%E7%82%B9%E5%AE%9E%E9%AA%8C%E5%AE%A4%2C%E6%B1%9F%E8%8B%8F%E5%8D%97%E4%BA%AC210016&rft.issn=1001-9014&rft.volume=33&rft.issue=3&rft.spage=256&rft.epage=262&rft_id=info:doi/10.3724%2FSP.J.1010.2014.00256&rft.externalDocID=hwyhmb201403009 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F95821A%2F95821A.jpg http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fwww.wanfangdata.com.cn%2Fimages%2FPeriodicalImages%2Fhwyhmb%2Fhwyhmb.jpg |