不同浸水时间对大豆种子发芽的影响

【目的】观察桂春8号和桂春11号大豆种子在不同浸水时间处理条件下的受害表现,筛选出大豆种子耐浸水胁迫处理方法。【方法】以去离子水浸泡12-168 h后,分别测定浸泡溶液电导性及种子的发芽势、出苗率和正常苗率等。【结果】浸水处理对大豆种子产生严重的危害,浸水后大豆种皮消融,种子内溶物外漏,种子萌芽子叶出现坏斑,部分真叶坏死,生长点消失;根部主根发育受到破坏,长出不定根,严重时根部不能发育,部分种子向地性消失。随着浸水时间的延长,大豆浸泡液电导率不断增加,发芽势、出苗率、正常苗率逐渐降低,浸泡液电导率与发芽势、出苗率、正常苗率的相关系数分别为-0.823、-0.854和-0.811,达极显著负相关...

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Published in南方农业学报 Vol. 44; no. 12; pp. 1981 - 1984
Main Author 陈文杰 陈渊 梁江 曾维英 汤复跃 韦清源
Format Journal Article
LanguageChinese
Published 广西农业科学院经济作物研究所,南宁,530007 2013
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ISSN2095-1191
DOI10.3969/j:issn.2095-1191.2013.12.1981

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Summary:【目的】观察桂春8号和桂春11号大豆种子在不同浸水时间处理条件下的受害表现,筛选出大豆种子耐浸水胁迫处理方法。【方法】以去离子水浸泡12-168 h后,分别测定浸泡溶液电导性及种子的发芽势、出苗率和正常苗率等。【结果】浸水处理对大豆种子产生严重的危害,浸水后大豆种皮消融,种子内溶物外漏,种子萌芽子叶出现坏斑,部分真叶坏死,生长点消失;根部主根发育受到破坏,长出不定根,严重时根部不能发育,部分种子向地性消失。随着浸水时间的延长,大豆浸泡液电导率不断增加,发芽势、出苗率、正常苗率逐渐降低,浸泡液电导率与发芽势、出苗率、正常苗率的相关系数分别为-0.823、-0.854和-0.811,达极显著负相关。此外,桂春11号的发芽势、正常苗率均显著高于桂春8号。【结论】桂春11号的耐浸水胁迫能力高于桂春8号。浸泡液电导率可作为大批量初步筛选大豆耐浸水种质资源的指标,发芽势、正常芽率等可作为进一步筛选大豆耐浸水胁迫的指标。
Bibliography:45-1381/S
Objective】The responses of Guichun 8 and Guichun 11 in different soaking durations were studied to investigate the screening technique for soybean seed flooding tolerance. 【Method】Two varieties were flooded for 12-168 h in deionized water. The electrical conductivity of soybean soaking liquid, germination energy, germination percentage and normal seeding percentage were detected. 【Result】Soaking treatment was disastrous for soybean seed, which made seed skin melt, internal soluble substance spill, euphylla die, bad spot appear in cotyledon, growing point vanish, main root hurt and adventitious root grow. Under more serious circumstances, root growth was terminated and the geotropism of partial seeds disappeared. As the treatment time prolonged, electrical conductivity was increased, however germination energy, germination percentage and normal seeding percentage were gradually decreased. The coefficient of association between electrical conductivity and other three indexes was -0.823, -0.854 and -0.8
ISSN:2095-1191
DOI:10.3969/j:issn.2095-1191.2013.12.1981