有机发光二极管中ADN掺杂ErQ的1.54μm电致发光
自行设计了基于8-羟基喹啉铒（ErQ）为发射层（EMLs）和二硝酰胺铵（ADN）为蓝光主体材料的近红外有机发光二级管.器件的基本结构为（p-Si/NPB/EML/Bphen/Bphen∶ Cs2CO3/Sm/Au）,设计并比较了三套不同发射层结构（ErQ/ADN为双层结构器件,（ErQ/ADN）×3为多层结构器件,ErQ∶ ADN为掺杂结构器件）的器件.三组器件在一定的偏压下,均可发出1.54 μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN∶ErQ（1∶1）掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN：ErQ复合膜做了以下表征...
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| Published in | 红外与毫米波学报 Vol. 33; no. 1; pp. 31 - 35 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
北京大学物理学院人工微结构与介观物理国家重点实验室,北京,100871
2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2014.00031 |
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| Abstract | 自行设计了基于8-羟基喹啉铒（ErQ）为发射层（EMLs）和二硝酰胺铵（ADN）为蓝光主体材料的近红外有机发光二级管.器件的基本结构为（p-Si/NPB/EML/Bphen/Bphen∶ Cs2CO3/Sm/Au）,设计并比较了三套不同发射层结构（ErQ/ADN为双层结构器件,（ErQ/ADN）×3为多层结构器件,ErQ∶ ADN为掺杂结构器件）的器件.三组器件在一定的偏压下,均可发出1.54 μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN∶ErQ（1∶1）掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN：ErQ复合膜做了以下表征：吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移. |
|---|---|
| AbstractList | 自行设计了基于8-羟基喹啉铒（ErQ）为发射层（EMLs）和二硝酰胺铵（ADN）为蓝光主体材料的近红外有机发光二级管.器件的基本结构为（p-Si/NPB/EML/Bphen/Bphen∶ Cs2CO3/Sm/Au）,设计并比较了三套不同发射层结构（ErQ/ADN为双层结构器件,（ErQ/ADN）×3为多层结构器件,ErQ∶ ADN为掺杂结构器件）的器件.三组器件在一定的偏压下,均可发出1.54 μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN∶ErQ（1∶1）掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN：ErQ复合膜做了以下表征：吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移. O433.1%O472+.3; 自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen∶ Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ∶ ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54 μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN∶ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移. |
| Author | 屈海京 陶利 王维 冉广照 |
| AuthorAffiliation | 北京大学物理学院人工微结构与介观物理国家重点实验室,北京100871 |
| AuthorAffiliation_xml | – name: 北京大学物理学院人工微结构与介观物理国家重点实验室,北京,100871 |
| Author_FL | QU Hai-Jing WANG Wei TAO Li RAN Guang-Zhao |
| Author_FL_xml | – sequence: 1 fullname: QU Hai-Jing – sequence: 2 fullname: TAO Li – sequence: 3 fullname: WANG Wei – sequence: 4 fullname: RAN Guang-Zhao |
| Author_xml | – sequence: 1 fullname: 屈海京 陶利 王维 冉广照 |
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| ClassificationCodes | O433.1%O472+.3 |
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| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.3724/SP.J.1010.2014.00031 |
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| DocumentTitleAlternate | 1.54 μm electroluminescence from ErQ doped ADN organic light-emitting diodes |
| DocumentTitle_FL | 1.54 μm electroluminescence from ErQ doped ADN organic light-emitting diodes |
| EndPage | 35 |
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| Keywords | 8-羟基喹啉铒 organic light-emitting device erbium tris (8-hydroxyquinoline) near-infrared 近红外发光 有机发光二级管 |
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| Notes | QU Hai-Jing, TAO Li, WANG Wei, RAN Guang-Zhao （State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China） 31-1577/TN A near-infrared （NIR） organic light-emitting devices （OLEDs） was demonstrated with emissive layers （EMLs） based on erbium （111） tris （8-hydroxyquinoline） （ErQ） and the blue host material of 9,10-di-beta-naphthylanthraeene （ADN）. The fundamental structure of the devices is （p-Si/NPB/EML/Bphen/Bphen： Cs2COs/Sm/Au）, where three sets of EMLs （ErQ/ADN bilayer, （ErQ/ADN） ×3 mnhilayer, and ErQ： ADN doped layer） have been compared. In all the three structures, 1.54 μm eleetroluminescence was observed due to the 4113/2 -4I15/2 transitions of Er3＋. Compared with the ADN/ErQ bilayer structure, the NIR eleetrol （EL） intensity is stronger by three times in the ADN： ErQ（ 1：1 ） doped structure. The ADN： ErQ composite films with different doping levels were further characterized by the measurements of absorption, photol and photoluminescence decay time. The resul |
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| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2014 |
| Publisher | 北京大学物理学院人工微结构与介观物理国家重点实验室,北京,100871 |
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| Snippet | 自行设计了基于8-羟基喹啉铒（ErQ）为发射层（EMLs）和二硝酰胺铵（ADN）为蓝光主体材料的近红外有机发光二级管.器件的基本结构为（p-Si/NPB/EML/Bphen/Bphen∶... O433.1%O472+.3; 自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen∶... |
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| StartPage | 31 |
| SubjectTerms | 8-hydroxyquinoline 8-羟基喹啉铒 erbium tris 有机发光二级管 近红外发光 |
| Title | 有机发光二极管中ADN掺杂ErQ的1.54μm电致发光 |
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