Si3N4／TiC纳米复合陶瓷材料R曲线行为

在微米Si3N4基体中加入亚微米Si3N4及纳米TiC颗粒，热压烧结制备出力学性能良好的Si3N4／TiC纳米复合陶瓷材料。采用压痕-弯曲强度法测定了复合材料的裂纹扩展阻力曲线（R曲线）。结果表明：材料呈现出上升的阻力曲线特性，显示出增强的抗裂纹扩展能力。其中，加入质量分数为10％亚微米Si3N4颗粒和15％纳米TiC颗粒的复合材料显示出较为优越的抗裂纹扩展能力，其阻力曲线上升最陡，上升幅度最大。分析表明：弥散的TiC粒子同基体之间弹性模量和热膨胀失配以及Si3N4类晶须拔出与桥联补强协同增韧，有助于纳米复合材料抑制主裂纹失稳扩展，导致复合材料的阻力曲线行为。...

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Bibliographic Details
Published in材料工程 no. 7; pp. 76 - 80
Main Author 吕志杰 赵军
Format Journal Article
LanguageChinese
Published 山东大学机械工程学院高效洁净机械制造教育部重点实验室,济南250061%山东大学机械工程学院高效洁净机械制造教育部重点实验室,济南,250061 2012
山东大学材料科学与工程学院,济南250061
山东建筑大学机电工程学院,济南250101
Subjects
压痕-强度
氮化硅
纳米复合陶瓷
阻力曲线
阻力曲线
氮化硅
纳米复合陶瓷
压痕-强度
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ISSN1001-4381
1001-4381
DOI10.3969/j.issn.1001-4381.2012.07.016

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Summary:在微米Si3N4基体中加入亚微米Si3N4及纳米TiC颗粒，热压烧结制备出力学性能良好的Si3N4／TiC纳米复合陶瓷材料。采用压痕-弯曲强度法测定了复合材料的裂纹扩展阻力曲线（R曲线）。结果表明：材料呈现出上升的阻力曲线特性，显示出增强的抗裂纹扩展能力。其中，加入质量分数为10％亚微米Si3N4颗粒和15％纳米TiC颗粒的复合材料显示出较为优越的抗裂纹扩展能力，其阻力曲线上升最陡，上升幅度最大。分析表明：弥散的TiC粒子同基体之间弹性模量和热膨胀失配以及Si3N4类晶须拔出与桥联补强协同增韧，有助于纳米复合材料抑制主裂纹失稳扩展，导致复合材料的阻力曲线行为。
Bibliography:11-1800/TB
silicon nitride ;R-curve ; nanocomposite ceramic ; indentation-strength
Si3N4/TiC nanocomposite ceramic materials were fabricated via hot pressing technique by adding submicro Si3N4 and nano-TiC powders and with Al3O3 and Y2O3 as additives. The crack growth resistance behavior （R-curve） of ceramic materials was evaluated using the indentation- strength method. The results indicate that the ceramic materials possess rising R-curve behavior, which exhibits an excellent crack growth resistance. The sample with 10% （mass fraction） submicro- Si3N4 and 15% nano-TiC has a steepest rising R-curve. Observation and analysis indicate that these phenomena can be attributed mainly to the synergetic toughening mechanism caused by pull-out and bridging of the Si3N4 quasiwhiskers, the elastic modulus and thermal expansion mismatch between Si3 N4 and TiC particles.
LU Zhi-jie , ZHAO Jun （1 School of Materials Science and Engineering,Shandong University,Jinan 250061, China;2 School of Mechanical and Electronic Engineer
ISSN:1001-4381
1001-4381
DOI:10.3969/j.issn.1001-4381.2012.07.016