Recent Progress on the Long‐Term Stability of Perovskite Solar Cells

As rapid progress has been achieved in emerging thin film solar cell technology, organic–inorganic hybrid perovskite solar cells (PVSCs) have aroused many concerns with several desired properties for photovoltaic applications, including large absorption coefficients, excellent carrier mobility, long...

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Published inAdvanced science Vol. 5; no. 5; pp. 1700387 - n/a
Main Authors Fu, Qingxia, Tang, Xianglan, Huang, Bin, Hu, Ting, Tan, Licheng, Chen, Lie, Chen, Yiwang
Format Journal Article
LanguageEnglish
Published Germany John Wiley & Sons, Inc 01.05.2018
John Wiley and Sons Inc
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ISSN2198-3844
2198-3844
DOI10.1002/advs.201700387

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Summary:As rapid progress has been achieved in emerging thin film solar cell technology, organic–inorganic hybrid perovskite solar cells (PVSCs) have aroused many concerns with several desired properties for photovoltaic applications, including large absorption coefficients, excellent carrier mobility, long charge carrier diffusion lengths, low‐cost, and unbelievable progress. Power conversion efficiencies increased from 3.8% in 2009 up to the current world record of 22.1%. However, poor long‐term stability of PVSCs limits the future commercial application. Here, the degradation mechanisms for unstable perovskite materials and their corresponding solar cells are discussed. The strategies for enhancing the stability of perovskite materials and PVSCs are also summarized. This review is expected to provide helpful insights for further enhancing the stability of perovskite materials and PVSCs in this exciting field. Perovskite solar cells have attracted much attention due to their low‐cost fabrication and high efficiency, with a recently recorded power conversion efficiency of 22.1%. However, a crucial challenge for perovskite solar cells is stability. The various external causes of failure, such as moisture, heat, light, etc., and associated mechanisms of perovskite solar cells degradation from two aspects of perovskite layer and device structure are reviewed.
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ISSN:2198-3844
2198-3844
DOI:10.1002/advs.201700387