Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multi...

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Published inProceedings of the National Academy of Sciences - PNAS Vol. 109; no. 5; pp. 1407 - 1412
Main Authors Kempa, Thomas J, Cahoon, James F, Kim, Sun-Kyung, Day, Robert W, Bell, David C, Park, Hong-Gyu, Lieber, Charles M
Format Journal Article
LanguageEnglish
Published United States National Academy of Sciences 31.01.2012
National Acad Sciences
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ISSN0027-8424
1091-6490
1091-6490
DOI10.1073/pnas.1120415109

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Summary:Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial Formula (p/n) and p/intrinsic/n (p/i/n) diode junctions. Designed 200–300 nm diameter p/i/n NW diodes exhibit ultralow leakage currents of approximately 1 fA, and open-circuit voltages and fill-factors up to 0.5 V and 73%, respectively, under one-sun illumination. Single-NW wavelength-dependent photocurrent measurements reveal size-tunable optical resonances, external quantum efficiencies greater than unity, and current densities double those for silicon films of comparable thickness. In addition, finite-difference-time-domain simulations for the measured NW structures agree quantitatively with the photocurrent measurements, and demonstrate that the optical resonances are due to Fabry-Perot and whispering-gallery cavity modes supported in the high-quality faceted nanostructures. Synthetically optimized NW devices achieve current densities of 17 mA/cm2 and power-conversion efficiencies of 6%. Horizontal integration of multiple NWs demonstrates linear scaling of the absolute photocurrent with number of NWs, as well as retention of the high open-circuit voltages and short-circuit current densities measured for single NW devices. Notably, assembly of 2 NW elements into vertical stacks yields short-circuit current densities of 25 mA/cm2 with a backside reflector, and simulations further show that such stacking represents an attractive approach for further enhancing performance with projected efficiencies of > 15% for 1.2 μm thick 5 NW stacks.
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2Present address: Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599
Author contributions: T.J.K., J.F.C., H.-G.P., and C.M.L. designed research; T.J.K., J.F.C., S.-K.K., R.W.D., and D.C.B. performed research; T.J.K., J.F.C., S.-K.K., R.W.D., D.C.B., H.-G.P., and C.M.L. analyzed data; and T.J.K., J.F.C., H.-G.P., and C.M.L. wrote the paper.
1T.J.K. and J.F.C. contributed equally to this work.
Contributed by Charles M. Lieber, December 12, 2011 (sent for review December 1, 2011)
ISSN:0027-8424
1091-6490
1091-6490
DOI:10.1073/pnas.1120415109