The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion...

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Published inNanomaterials (Basel, Switzerland) Vol. 14; no. 19; p. 1612
Main Authors Majkowycz, Kinga, Murawski, Krzysztof, Kopytko, Małgorzata, Nowakowski-Szkudlarek, Krzesimir, Witkowska-Baran, Marta, Martyniuk, Piotr
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 09.10.2024
MDPI
Subjects
Analysis
Antimony
Arsenic
Chemical etching
Deep level transient spectroscopy
Defects
DLTS
Etching
Indium
Indium arsenides
Influence
Ion beams
MBE
MCT
Measurement techniques
Methods
MOCVD
Molecular beam epitaxy
Organic chemicals
Photodiodes
Point defects
Reactive ion etching
Semiconductors
Sensors
Spectroscopy
Superlattices
Superlattices as materials
T2SL
Temperature
wet etching
Poland
MBE
T2SL
ICP RIE
DLTS
wet etching
mixed etching
MOCVD
MCT
Online AccessGet full text
ISSN2079-4991
2079-4991
DOI10.3390/nano14191612

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Abstract The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.
AbstractList The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE-reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.
Audience Academic
Author Kopytko, Małgorzata
Nowakowski-Szkudlarek, Krzesimir
Murawski, Krzysztof
Witkowska-Baran, Marta
Majkowycz, Kinga
Martyniuk, Piotr
AuthorAffiliation 2 VIGO Photonics S.A., 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland; knszkudlarek@vigo.com.pl (K.N.-S.); mwbaran@vigo.com.pl (M.W.-B.)
1 Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland; krzysztof.murawski01@wat.edu.pl (K.M.); malgorzata.kopytko@wat.edu.pl (M.K.); piotr.martyniuk@wat.edu.pl (P.M.)
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Cites_doi 10.1201/b22787
10.1063/1.3671398
10.1007/s11664-008-0477-5
10.1063/1.1663719
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Keywords MBE
T2SL
ICP RIE
DLTS
wet etching
mixed etching
MOCVD
MCT
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StartPage 1612
SubjectTerms Analysis
Antimony
Arsenic
Chemical etching
Deep level transient spectroscopy
Defects
DLTS
Etching
Indium
Indium arsenides
Influence
Ion beams
MBE
MCT
Measurement techniques
Methods
MOCVD
Molecular beam epitaxy
Organic chemicals
Photodiodes
Point defects
Reactive ion etching
Semiconductors
Sensors
Spectroscopy
Superlattices
Superlattices as materials
T2SL
Temperature
wet etching
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Title The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials
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https://pubmed.ncbi.nlm.nih.gov/PMC11478437
https://doaj.org/article/57318bb9090b40a283e2e657222c7ae1
Volume 14
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