The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

• Published in: Nanomaterials (Basel, Switzerland) Vol. 14; no. 19; p. 1612
• Main Authors: Majkowycz, Kinga, Murawski, Krzysztof, Kopytko, Małgorzata, Nowakowski-Szkudlarek, Krzesimir, Witkowska-Baran, Marta, Martyniuk, Piotr
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 09.10.2024; MDPI
• Subjects: Analysis; Antimony; Arsenic; Chemical etching; Deep level transient spectroscopy; Defects; DLTS; Etching; Indium; Indium arsenides; Influence; Ion beams; MBE; MCT; Measurement techniques; Methods; MOCVD; Molecular beam epitaxy; Organic chemicals; Photodiodes; Point defects; Reactive ion etching; Semiconductors; Sensors; Spectroscopy; Superlattices; Superlattices as materials; T2SL; Temperature; wet etching; Poland; MBE; T2SL; ICP RIE; DLTS; wet etching; mixed etching; MOCVD; MCT
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano14191612

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs.