Nitrogenated holey two-dimensional structures

• Published in: Nature communications Vol. 6; no. 1; p. 6486
• Main Authors: Mahmood, Javeed, Lee, Eun Kwang, Jung, Minbok, Shin, Dongbin, Jeon, In-Yup, Jung, Sun-Min, Choi, Hyun-Jung, Seo, Jeong-Min, Bae, Seo-Yoon, Sohn, So-Dam, Park, Noejung, Oh, Joon Hak, Shin, Hyung-Joon, Baek, Jong-Beom
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 06.03.2015; Nature Publishing Group; Nature Pub. Group
• Subjects: 140/146; 639/301/357/1018; 639/925/930/1032; Chemical reactions; Crystals; Humanities and Social Sciences; multidisciplinary; Science; Science (multidisciplinary)
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms7486

Recent graphene research has triggered enormous interest in new two-dimensional ordered crystals constructed by the inclusion of elements other than carbon for bandgap opening. The design of new multifunctional two-dimensional materials with proper bandgap has become an important challenge. Here we report a layered two-dimensional network structure that possesses evenly distributed holes and nitrogen atoms and a C 2 N stoichiometry in its basal plane. The two-dimensional structure can be efficiently synthesized via a simple wet-chemical reaction and confirmed with various characterization techniques, including scanning tunnelling microscopy. Furthermore, a field-effect transistor device fabricated using the material exhibits an on/off ratio of 10 7 , with calculated and experimental bandgaps of approximately 1.70 and 1.96 eV, respectively. In view of the simplicity of the production method and the advantages of the solution processability, the C 2 N- h 2D crystal has potential for use in practical applications. There is currently interest in two-dimensional graphene-like materials incorporating heteroatoms. Here, the authors synthesize a solution-processable, holey two-dimensional network with C 2 N stoichiometry containing evenly distributed holes and nitrogen atoms, and use it to fabricate a field effect transistor.