Highly individual SWCNTs for high performance thin film electronics

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCN...

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Published inCarbon (New York) Vol. 103; pp. 228 - 234
Main Authors Kaskela, Antti, Laiho, Patrik, Fukaya, Norihiro, Mustonen, Kimmo, Susi, Toma, Jiang, Hua, Houbenov, Nikolay, Ohno, Yutaka, Kauppinen, Esko I.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.07.2016
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ISSN0008-6223
1873-3891
DOI10.1016/j.carbon.2016.02.099

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Summary:We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance – the highest reported for any carbon nanotube TCF – and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V−1s−1 and ON/OFF-ratios up to 106.
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ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2016.02.099