Growth of bulk GaN crystal by Na flux method under various conditions

• Published in: Journal of crystal growth Vol. 350; no. 1; pp. 72 - 74
• Main Authors: Mori, Y., Imade, M., Murakami, K., Takazawa, H., Imabayashi, H., Todoroki, Y., Kitamoto, K., Maruyama, M., Yoshimura, M., Kitaoka, Y., Sasaki, T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2012; Elsevier
• Subjects: A1. Na flux method; A2. GaN bulk crystal; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Devices; Exact sciences and technology; Flux; Gallium nitrides; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Seeds; Semiconductors; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Vapor phases; A1. Na flux method; A2. GaN bulk crystal; Crystal growth; Calcium selenides; Vapor phase; Growth mechanism; Crystal seeds; Gallium nitride; III-V compound; Crystal growth from melts; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.12.026

High-quality and low cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. There are two approaches for the growth of bulk GaN crystal by the Na flux method. One is to grow thick GaN crystal on a large seed GaN crystal grown by vapor phase method. The other is to grow GaN crystal on a small seed GaN crystal. 3in diameter GaN crystals were grown on the large GaN seed crystal. In the case of the growth on a small GaN seed, we obtained bulk crystal with a pyramidal shape and its height and diameter were 15mm and >20mm, respectively. We also present the effects of the impurity in the solution on the property and growth habit.