Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

• Published in: IEEE journal of the Electron Devices Society Vol. 2; no. 6; pp. 187 - 190
• Main Authors: Abdi, Dawit B., Kumar, M. Jagadesh
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.2014
• Subjects: Capacitance; Doping; Field effect transistors; Semiconductor process modeling; Tunneling; tunneling barrier width; Ambipolarity; overlapping gate-on-drain; TFET; overlap length
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2014.2327626

In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage, overlapping the gate on the drain limits the gate to control only the tunneling barrier width at the source-channel interface irrespective of the polarity of the gate voltage. As a result, the proposed overlapping gate-on-drain TFET exhibits suppressed ambipolar conduction even when the drain doping is as high as 1 × 10 19 cm -3 .