A Review of the Pinned Photodiode for CCD and CMOS Image Sensors

The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode.

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 2; no. 3; pp. 33 - 43
Main Authors Fossum, Eric R., Hondongwa, Donald B.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.2014
Subjects
Charge coupled devices
Charge transfer
CMOS image sensors
CMOS integrated circuits
Electric potential
Photodiodes
pinned photodiode (PPD)
CMOS active pixel image sensor (CIS)
pixel
Charge-coupled device (CCD)
photodetector
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ISSN2168-6734
2168-6734
DOI10.1109/JEDS.2014.2306412

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Summary:The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors. This paper reviews the development, physics, and technology of the pinned photodiode.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2014.2306412