Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode

The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current d...

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Published inChinese physics B Vol. 20; no. 11; pp. 446 - 450
Main Author 陈丰平 张玉明 张义门 汤晓燕 王悦湖 陈文豪
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Barriers
Density
Diodes
Electric potential
Guards
Leakage current
SiC
Tradeoffs
Voltage
制造
势垒高度
反向恢复
开启电压
漏电流密度
稳定运行
肖特基二极管
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/11/117301

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Summary:The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
Bibliography:Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Tang XiaoYan,Wang Yue-Hu,Chen Wen-Ha（a） School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University, Xi＇an 710071, China ; b） School of Technical Physics, Xidian University, Xi＇an 710071, China
4H-SiC; junction barrier Schottky; offset field plate; electrical characteristics
11-5639/O4
The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/117301