Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers

• Published in: Advanced functional materials Vol. 23; no. 39; pp. 4960 - 4968
• Main Authors: Chang, Hsuan-Chun, Liu, Cheng-Liang, Chen, Wen-Chang
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 18.10.2013; WILEY‐VCH Verlag
• Subjects: Channels; Data storage; flexible; Gold; gold nanoparticles; nanofiber; Nanofibers; Nanostructure; nonvolatile memory; P3HT; Semiconductor devices; Threshold voltage; transistor; Transistors
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201300283

A novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3‐hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self‐assembled monolayer (SAM) of para‐substituted amino (Au‐NH2), methyl (Au‐CH3) or trifluoromethyl (Au‐CF3) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of ±5 V, the hybrid nanofiber transistor memories exhibit a 3.5–10.6 V threshold voltage shifting and at least 104 s data retention, with a minimum effect on ≈100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au‐NH2 > Au‐CH3 > Au‐CF3. The devices remain reliable and stable even under the bending conditions (radius: 5–30 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high‐performance digital nanoscale memories for flexible high density data storage devices. Novel flexible nonvolatile transistor memory devices based on the electrospun nanofiber of poly(3‐hexylthiophene):surface‐modified gold nanoparticles show a low voltage operation (±5 V), large threshold voltage shift (3.5–10.6 V), long retention times (>104 s), and good endurance properties (>100 cycles) regardless of mechanical bending stress.