王志华, 刘. 陈. 李. (2010). An ultra-low-power 1 kb sub-threshold SRAM in the 180 nm CMOS process. Journal of semiconductors, 31(6), 142-145. https://doi.org/10.1088/1674-4926/31/6/065013
Chicago Style (17th ed.) Citation王志华, 刘鸣 陈虹 李长猛. "An Ultra-low-power 1 Kb Sub-threshold SRAM in the 180 Nm CMOS Process." Journal of Semiconductors 31, no. 6 (2010): 142-145. https://doi.org/10.1088/1674-4926/31/6/065013.
MLA (9th ed.) Citation王志华, 刘鸣 陈虹 李长猛. "An Ultra-low-power 1 Kb Sub-threshold SRAM in the 180 Nm CMOS Process." Journal of Semiconductors, vol. 31, no. 6, 2010, pp. 142-145, https://doi.org/10.1088/1674-4926/31/6/065013.
Warning: These citations may not always be 100% accurate.