Wet chemical synthesis of WO3 thin films for supercapacitor application

Tungstic oxide (WO 3 ) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern reve...

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Published inThe Korean journal of chemical engineering Vol. 32; no. 5; pp. 974 - 979
Main Authors Shinde, Nanasaheb Madhukar, Jagadale, Ajay Dattu, Kumbhar, Vijay Shamrao, Rana, Tanka Raj, Kim, JunHo, Lokhande, Chandrakant Dnyandev
Format Journal Article
LanguageEnglish
Published New York Springer US 01.05.2015
한국화학공학회
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ISSN0256-1115
1975-7220
DOI10.1007/s11814-014-0323-9

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Summary:Tungstic oxide (WO 3 ) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO 3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO 3 thin films. The WO 3 film showed a direct band gap of 2.5 eV. The WO 3 film exhibited specific capacitance of 266 F·g −1 in 1 M Na 2 SO 4 electrolyte at the scan rate of 10 mVs −1 .
Bibliography:G704-000406.2015.32.5.013
ISSN:0256-1115
1975-7220
DOI:10.1007/s11814-014-0323-9