Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence （PL） emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in di...

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Bibliographic Details
Published inChinese physics B Vol. 19; no. 9; pp. 590 - 594
Main Author 黄伟其 刘家兴 蔡成兰 吕泉 刘世荣 秦朝建
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
Subjects
Atmospheres
Density
Emission
Nanocomposites
Nanostructure
Photoluminescence
Quantum dots
Silicon
光致发光
发光峰
受激辐射
硅量子点
脉冲激光
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/9/097801

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Summary:Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence （PL） emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.
Bibliography:O471.5
11-5639/O4
TN241
nitrogen and oxygen, quantum dots, stimulated emission, localised states
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/9/097801