Influence of Boron doping on microcrystalline silicon growth

Microcrystalline silicon （μc-Si：H） thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic fo...

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Published inChinese physics B Vol. 20; no. 9; pp. 317 - 322
Main Author 李新利 陈永生 杨仕娥 谷锦华 卢景霄 郜小勇 李瑞 焦岳超 高海波 王果
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2011
Subjects
Boron
Doping
Evolution
Exponents
Plasma enhanced chemical vapor deposition
Silicon
Silicon films
Thin films
原子力显微镜
微晶硅
椭偏光谱
硼掺杂
等离子体增强化学气相沉积法
粗糙度指数
薄膜生长
表面粗糙度
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/9/096801

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Summary:Microcrystalline silicon （μc-Si：H） thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponentβ and the roughness exponent cχ are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si：H thin film, t3 increases to 0.534 and cχ decreases to 0.46 due to the shadowing effect.
Bibliography:Microcrystalline silicon （μc-Si：H） thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponentβ and the roughness exponent cχ are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si：H thin film, t3 increases to 0.534 and cχ decreases to 0.46 due to the shadowing effect.
Li Xin-Li Chen Yong-Sheng Yang Shi-E Gu Jin-Hua Lu Jing-Xiao Gao Xiao-Yong Li Rui Jiao Yue-Chao Gao Hai-Bo and Wang Guo a） The Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China b） Henan University of Technology, Zhengzhou 450051, China
microcrystalline silicon thin film, surface roughness, shadowing effect
11-5639/O4
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/9/096801