Ohmic contacts of 4H-SiC on ion-implantation layers

The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic conta...

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Bibliographic Details
Published in	Chinese physics B Vol. 19; no. 1; pp. 461 - 465
Main Author	王守国张岩张义门张玉明
Format	Journal Article
Language	English
Published	IOP Publishing 2010
Subjects	SiC 接触电阻欧姆接触氮离子注入注入参数测量方法离子注入层蒙特卡罗仿真
Online Access	Get full text
ISSN	1674-1056 2058-3834
DOI	10.1088/1674-1056/19/1/017204

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Summary:	The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods （TLMs）. The results show that the values of sheet resistance Rsh are 30 kΩ/□ and 4.9 kΩ/□ and the values of specific contact resistance Pc of ohmic contacts are 7.1 × 10^-4 Ω. cm^2 and 9.5× 10^-5Ω. cm^2 for the implanted layers with implantation performed three and four times respectively.
Bibliography:	silicon carbide, ion implantation, ohmic contact, sheet resistance 11-5639/O4 TN305.93 TN304.24 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1
ISSN:	1674-1056 2058-3834
DOI:	10.1088/1674-1056/19/1/017204