Nonlocal voltage in a spin field effect transistor with finite channel width

• Published in: Current applied physics Vol. 11; no. 3; pp. 276 - 279
• Main Authors: Eom, Jonghwa, Koo, Hyun Cheol, Chang, Joonyeon, Han, Suk Hee
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2011; 한국물리학회
• Subjects: Channels; Detectors; Electric potential; Electron gas; electrons; Field effect transistors; physics; Rashba spin splitting; Semiconductor devices; semiconductors; Spin field effect transistor; Spin-orbit interactions; Spin–orbit interaction; Voltage; 물리학; Spin field effect transistor; Spin–orbit interaction; Rashba spin splitting
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2010.07.019

Spin transport in the two-dimensional electron gas with strong spin–orbit interaction is examined by using a simple phenomenological simulation. The large spin–orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin–orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.